SIZ340DT-T1-GE3

SIZ340DT-T1-GE3

$1.11
  • Description:MOSFET 2N-CH 30V 30A/40A 8PWR33
  • Series:PowerPAIR®, TrenchFET®

SKU:8b0247fd4dc2 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 30A/40A 8PWR33
  • Series:PowerPAIR®, TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:30A, 40A
  • Rds On (Max) @ Id, Vgs:9.5mOhm @ 15.6A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:760pF @ 15V
  • Power - Max:16.7W, 31W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-Power33 (3x3)
  • Grade:-
  • Qualification:-

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SIZ340DT-T1-GE3

Overview

The SIZ340DT-T1-GE3 is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology and housed in an 8-pin PowerPAIR 3 x 3 surface-mount package. It features two independent channels with a drain-source voltage rating of 30 V. Channel-1 offers a maximum on-resistance of 9.5 mΩ at VGS = 10 V and a continuous drain current of 30 A (TC = 25 °C). Channel-2 provides a lower on-resistance of 5.1 mΩ at VGS = 10 V and supports up to 40 A under the same conditions. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Optimized for high-side and low-side configurations in synchronous buck converters
  • Features TrenchFET power MOSFET technology for enhanced performance
  • Includes 100% gate resistance and unclamped inductive switching (UIS) testing

Applications

  • Synchronous buck converters for battery charging systems
  • Computer system power distribution circuits
  • Power delivery stages in graphic cards
  • Point-of-load (POL) regulation modules

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm compliance with lead-free and halogen-free material requirements as stated in the ordering information. Ensure that the received package matches the PowerPAIR 3 x 3 outline dimensions and pad pattern recommendations to guarantee proper thermal and electrical connectivity during assembly.

Selection Notes

Select this component when designing synchronous rectification stages requiring matched or complementary channel characteristics within a single compact footprint. Consider the specific on-resistance and current capabilities of each channel independently, as they differ significantly. Evaluate thermal management strategies based on the provided junction-to-ambient and junction-to-case resistance values for the intended operating environment.

Part Context

This part belongs to the SiZ340DT series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is specifically engineered for applications demanding efficient power conversion in limited space. The PowerPAIR packaging allows for reduced board area compared to traditional discrete solutions while maintaining robust thermal dissipation capabilities through exposed copper terminals.

Replacement Considerations

Direct replacements must match the 30 V drain-source voltage rating and utilize the 8-pin PowerPAIR 3 x 3 package. Verify that alternative components offer comparable on-resistance values and gate charge characteristics to maintain switching performance. Ensure any substitute also meets the required thermal resistance and operating temperature range specifications.

SIZ340DT-T1-GE3SIZ340DT-T1-GE3
$1.11
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