SIZ342ADT-T1-GE3

$1.05

Description：MOSFET 2N-CH 30V 15.7A 8PWR33
Series：TrenchFET® Gen IV

SKU:292849585e80 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 15.7A 8PWR33
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 33.4A (Tc)
Rds On (Max) @ Id, Vgs：9.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：580pF @ 15V
Power - Max：3.7W (Ta), 16.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-Power33 (3x3)
Grade：-
Qualification：-

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SIZ342ADT-T1-GE3

Overview

The SiZ342ADT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum on-state resistance of 9.4 mΩ at VGS = 10 V and 14.4 mΩ at VGS = 4.5 V. Continuous drain current reaches 33.4 A at TC = 25 °C. Total gate charge is typically 8.1 nC at VGS = 10 V. The component is housed in a PowerPAIR 3 x 3 package with an exposed thermal pad.

Feature Summary

Optimized RDS(on) and Qg figure of merit for high-frequency switching efficiency
High-side and low-side MOSFETs form an optimized combination for 50% duty cycle applications
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)

Applications

Synchronous buck converters
DC/DC conversion circuits
Half-bridge configurations
Point-of-load (POL) power supplies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance. Confirm that the PowerPAIR 3 x 3 package dimensions match the target PCB footprint requirements. Ensure that the thermal management design accommodates the specified junction-to-case thermal resistance values under steady-state conditions.

Selection Notes

Select this component when a compact dual N-channel solution is required for synchronous rectification. The optimized internal pairing supports balanced performance in half-bridge topologies. Evaluate the gate charge specifications against the driving circuit capabilities to ensure adequate switching speeds. Verify that the 30 V breakdown voltage aligns with the system's maximum operating voltage.

Part Context

This part belongs to the SiZ series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3 surface-mount package, which integrates two independent N-channel devices into a single compact footprint. The series is designed to provide high current density and efficient thermal dissipation for modern power supply designs.