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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 17A 8PWR33
- Series：PowerPAIR®, TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc), 30A (Tc)
- Rds On (Max) @ Id, Vgs：28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA, 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V, 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 15V, 650pF @ 15V
- Power - Max：16W, 16.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
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Overview
The SiZ346DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an asymmetric PowerPAIR 3 x 3 leadless package with two independent channels. Channel-1 has a maximum RDS(on) of 28.5 mΩ at VGS = 10 V and a continuous drain current of 17 A. Channel-2 offers lower resistance at 11.5 mΩ max with a 30 A rating. The device supports a gate-source voltage range of ±20 V for Channel-1 and +20/-16 V for Channel-2, operates within -55 °C to +150 °C, and includes 100% UIS testing.
Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Asymmetric dual-channel configuration in a single leadless package
- Optimized Qgs/Qgd ratio for improved switching characteristics
- 100% tested for gate resistance and unclamped inductive switching
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecom DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance attributes such as halogen-free status. Ensure that the PowerPAIR package handling requirements are met during assembly, particularly regarding the exposed copper terminals. Confirm thermal management strategies align with the specified junction-to-ambient and junction-to-case resistance ratings for the intended operating environment.
Selection Notes
Select this component when space-constrained designs require dual synchronous rectification or independent channel control within a 3 mm by 3 mm footprint. The asymmetric channel ratings allow designers to pair a high-current path with a lower-resistance auxiliary path. Verify that the required gate drive voltage levels match the specified thresholds for optimal on-state performance and switching efficiency.
Part Context
This part belongs to the SiZ series of Vishay Siliconix MOSFETs, specifically designed for high-density power applications. It utilizes the PowerPAIR leadless package family, which eliminates traditional leads to reduce parasitic inductance and improve thermal dissipation capabilities compared to standard surface-mount packages.
Replacement Considerations
Direct pin-compatible replacements must be sourced from official Vishay cross-reference lists. Verify that any substitute maintains the 30 V drain-source voltage rating and fits the PowerPAIR 3 x 3 outline dimensions. Ensure thermal resistance and gate charge specifications meet or exceed the original design requirements.
