SIZ348DT-T1-GE3

$1.06

Description：MOSFET 2N-CH 30V 18A 8PWR33
Series：TrenchFET® Gen IV

SKU:bcc8601a4888 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 18A 8PWR33
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs：7.12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：820pF @ 15V
Power - Max：3.7W (Ta), 16.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-Power33 (3x3)
Grade：-
Qualification：-

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SIZ348DT-T1-GE3

Overview

The SiZ348DT-T1-GE3 is a dual N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 30 A at TC = 25 °C. The device offers a typical on-state resistance (RDS(on)) of 7.12 mΩ at VGS = 10 V and 10.19 mΩ at VGS = 4.5 V. Total gate charge is typically 12.1 nC at VGS = 10 V and 5.7 nC at VGS = 4.5 V. Packaged in a lead-free PowerPAIR 3 x 3 surface-mount footprint, it supports an operating junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET Gen IV architecture optimized for high-frequency switching efficiency
High-side and low-side channel combination designed for 50% duty cycle applications
Optimized RDS(on) versus gate charge figure of merit
100% tested for gate resistance and unclamped inductive switching

Applications

Synchronous buck converters
DC/DC conversion circuits
Half-bridge topologies
Point-of-load (POL) regulation

Procurement Notes

Verify the component against official Vishay datasheet specifications before integration. Confirm that the ordering suffix matches the required lead-free and halogen-free package configuration. Ensure design parameters align with absolute maximum ratings to prevent device failure during operation.

Selection Notes

Select this component for designs requiring low conduction losses and fast switching speeds in compact form factors. Evaluate thermal management requirements based on the specified junction-to-case and junction-to-ambient thermal resistances. Verify compatibility with available gate drive voltages, particularly for the 4.5 V and 10 V logic levels.

Part Context

This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3 package, which provides a small footprint suitable for space-constrained PCB layouts while maintaining robust thermal performance for power delivery applications.