SIZ730DT-T1-GE3

Description：MOSFET 2N-CH 30V 16A 6POWERPAIR
Series：TrenchFET®

SKU:89b323ff1947 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 16A 6POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：16A, 35A
Rds On (Max) @ Id, Vgs：9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：830pF @ 15V
Power - Max：27W, 48W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-PowerPair™
Supplier Device Package：6-PowerPair™
Grade：-
Qualification：-

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SIZ730DT-T1-GE3

Overview

The SiZ730DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. Channel-1 offers a maximum on-resistance of 9.3 mΩ at 10 V gate drive with a continuous current of 16 A (TC=25 °C), while Channel-2 provides 3.9 mΩ at 10 V with a 35 A continuous current rating. The device is housed in a leadless PowerPAIR 6 x 3.7 mm surface-mount package.

Feature Summary

TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

System power distribution for notebook computers
Server power management systems
Point-of-load (POL) conversion stages
Synchronous buck converter topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. Ensure that the component matches the required RoHS and halogen-free specifications before integration into final assemblies. Cross-reference datasheet revision numbers to validate parameter accuracy during the sourcing phase.

Selection Notes

Evaluate thermal dissipation requirements based on the specified junction-to-case resistance values. Confirm that the gate drive voltage aligns with the optimal on-resistance thresholds for both channels. Assess the physical footprint compatibility with the recommended PowerPAIR pad pattern to ensure reliable solder interconnection.

Part Context

This component belongs to the SiZ series of high-performance dual N-channel MOSFETs manufactured by Vishay Siliconix. The series utilizes advanced TrenchFET technology to achieve low on-state resistance and fast switching characteristics suitable for modern power management applications.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume pinout or electrical equivalence with other dual MOSFET packages without explicit datasheet confirmation.

FAQ

What is the maximum junction temperature for the SiZ730DT?

The operating junction and storage temperature range extends up to +150 °C.

How does the on-resistance vary between the two channels?

Channel-1 has a higher on-resistance (max 9.3 mΩ at 10 V) compared to Channel-2 (max 3.9 mΩ at 10 V), reflecting their respective current handling capabilities.