SIZ914DT-T1-GE3

Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
Series：TrenchFET®

SKU:a2e6a4c5586b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 16A 8POWERPAIR
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：16A, 40A
Rds On (Max) @ Id, Vgs：6.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1208pF @ 15V
Power - Max：22.7W, 100W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair®
Grade：-
Qualification：-

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SIZ914DT-T1-GE3

Overview

The Vishay Siliconix SiZ914DT is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features an asymmetric configuration within a PowerPAIR 6 x 5 leadless package. Channel-1 has a maximum RDS(on) of 6.4 mΩ at VGS = 10 V and a continuous drain current of 16 A. Channel-2 exhibits a lower RDS(on) of 1.37 mΩ at VGS = 10 V with a continuous drain current of 40 A. The device supports a gate-source voltage range of -16 V to +20 V, operates from -55 °C to +150 °C, and includes 100% Rg and UIS testing.

Feature Summary

Asymmetric dual N-channel architecture optimized for distinct load requirements
TrenchFET Gen IV technology ensuring low on-state resistance
Leadless PowerPAIR package design for efficient thermal dissipation

Applications

CPU Core Power
Computer/Server Peripherals
Synchronous Buck Converter
POL (Point-of-Load)
Telecom DC/DC

Procurement Notes

Verify the component against datasheet document number 62905 to confirm authenticity. Ensure the marking matches SIZ914DT-T1-GE3. Check for physical damage to the exposed copper terminals typical of the leadless PowerPAIR singulation process. Confirm RoHS compliance status as specified in the manufacturer documentation.

Selection Notes

Select this part for applications requiring two independent N-channel switches with different current handling capabilities. Channel-2 provides high-current switching capability while Channel-1 offers moderate current control. Verify that the required gate drive voltage aligns with the specified thresholds and that the PCB layout accommodates the specific PowerPAIR 6 x 5 footprint dimensions.

Part Context

This component belongs to the SiZ series of power MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR surface-mount package family designed for high-density board layouts. The device integrates standard enhancement-mode N-channel functionality without integrated Schottky diodes, distinguishing it from other variants in the broader product line.