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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 20A 8POWERPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual), Schottky
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc), 60A (Tc)
- Rds On (Max) @ Id, Vgs：6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.1nC @ 4.5V, 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：930pF @ 15V, 4600pF @ 15V
- Power - Max：20W, 66W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SiZ980DT is a dual N-channel 30 V MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. Channel-1 features a maximum RDS(on) of 6.7 mΩ at VGS = 10 V and a continuous drain current (ID) of 20 A. Channel-2 offers a lower RDS(on) of 1.6 mΩ at VGS = 10 V with an ID of 60 A. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAIR 6 x 5 package.
Feature Summary
- SkyFET low-side MOSFET architecture with an integrated Schottky diode for synchronous rectification
- TrenchFET Gen IV power MOSFET structure designed for high efficiency
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecom DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance attributes. Confirm that the component matches the required PowerPAIR 6 x 5 leadless package dimensions and pinout configuration before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring asymmetric dual-channel performance where one channel handles higher current loads than the other. Ensure the design accounts for the distinct thermal characteristics and on-resistance values between Channel-1 and Channel-2 under varying gate drive voltages.
Part Context
This part belongs to the SiZ series of dual MOSFETs from Vishay Siliconix. It integrates a standard N-channel MOSFET alongside a specialized SkyFET structure with a built-in Schottky diode, distinguishing it from standard dual-N-channel packages by providing inherent freewheeling capabilities.
Replacement Considerations
Direct replacements must match the PowerPAIR 6 x 5 footprint and provide comparable 30 V ratings. Verify that any substitute maintains the integrated Schottky diode functionality and similar thermal resistance profiles to ensure circuit compatibility.
