SIZ988DT-T1-GE3

Overview

The SIZ988DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET Gen IV technology and is housed in a PowerPAIR 6 x 5 leadless package. Channel-1 features a maximum RDS(on) of 7.5 mΩ at VGS = 10 V with a continuous drain current of 40 A, while Channel-2 offers a lower RDS(on) of 4.1 mΩ at VGS = 10 V supporting up to 60 A. The device operates within a junction temperature range of -55 °C to +150 °C and includes 100% gate resistance and UIS testing.

Feature Summary

• TrenchFET Gen IV power MOSFET architecture
• Optimized Qgs/Qgd ratio for improved switching characteristics
• Leadless PowerPAIR 6 x 5 package design

Applications

• CPU core power
• Computer / server peripherals
• POL (Point-of-Load)
• Synchronous buck converter
• Telecom DC/DC

Procurement Notes

Verify the complete part number including the suffix -T1-GE3 to ensure compliance with lead-free and halogen-free material requirements. Confirm that the ordering quantity aligns with the manufacturer's standard reel packaging specifications. Cross-reference the datasheet revision date against your specific application timeline to account for potential updates to electrical parameters or thermal ratings.

Selection Notes

Select this component when low on-state resistance and high current handling are required in a compact footprint. Evaluate the distinct performance profiles of Channel-1 and Channel-2 to optimize layout symmetry or assign specific roles based on their respective current capabilities. Ensure adequate thermal management is designed into the PCB to maintain junction temperatures within the specified operating range during peak load conditions.

Part Context

This component belongs to the SiZ988 series of dual N-channel MOSFETs from Vishay Siliconix. It is specifically engineered for applications demanding high efficiency and rapid switching speeds. The PowerPAIR package provides a robust solution for surface-mount assembly while minimizing parasitic inductance compared to traditional leaded packages.

Replacement Considerations

Direct replacements must match the 30 V rating, dual N-channel configuration, and PowerPAIR 6 x 5 footprint. Verify that any substitute maintains comparable RDS(on) values and thermal resistance characteristics to ensure circuit performance parity without requiring schematic modifications.

FAQ

What is the difference between Channel-1 and Channel-2?

Channel-2 has a lower on-resistance (4.1 mΩ max at VGS=10V) and higher continuous drain current capability (60 A) compared to Channel-1 (7.5 mΩ max, 40 A).

Is the PowerPAIR package leaded?

No, the PowerPAIR 6 x 5 is a leadless package where the end of the lead terminal is exposed copper as a result of the singulation process.

What testing is performed on the gate resistance?

The device undergoes 100% gate resistance (Rg) testing to ensure consistency and reliability.