SIZ998DT-T1-GE3

Overview

The SiZ998DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an asymmetric configuration within a single PowerPAIR 6 x 5 package: Channel 1 provides low-side switching with a maximum RDS(on) of 6.7 mΩ at VGS = 10 V and a continuous drain current of 20 A, while Channel 2 acts as a SkyFET low-side MOSFET with an integrated Schottky diode, offering a maximum RDS(on) of 2.8 mΩ at VGS = 10 V and a continuous drain current of 60 A. The device supports synchronous buck converter topologies and operates across a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Asymmetric dual N-channel architecture combining standard switching with high-current capability in a single leadless package
• Integrated SkyFET Schottky diode on Channel 2 for improved reverse recovery performance
• TrenchFET Gen IV power MOSFET technology optimized for low gate charge and fast switching speeds
• 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS) reliability

Applications

• CPU core power delivery systems
• Synchronous buck converters
• Point-of-load (POL) regulation
• Telecom DC/DC conversion
• Computer and server peripheral power management

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Confirm that the PowerPAIR package singulation process results in exposed copper terminals, which affects solder fillet formation during assembly. Ensure rework procedures adhere to manufacturer guidelines, as manual iron soldering is not recommended for this leadless component.

Selection Notes

Select this component when designing asymmetric half-bridge or synchronous rectifier stages requiring distinct current handling capabilities per channel. Channel 2 is suitable for high-current synchronous rectification due to its lower RDS(on), while Channel 1 serves as the primary switch. Validate thermal dissipation limits based on the specific PCB footprint and ambient conditions provided in the datasheet.

Part Context

This part belongs to the SiZ series of TrenchFET Gen IV MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 6 x 5 leadless surface-mount package, designed for high-density PCB layouts. The product integrates both discrete MOSFET functionality and a monolithic Schottky barrier diode to reduce parasitic inductance and improve overall converter efficiency.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.