SIZF5302DT-T1-RE3

$2.11

Description：MOSFET 2N-CH 30V 28.1A PWRPAIR
Series：TrenchFET® Gen V

SKU:1787c3e8d99b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 28.1A PWRPAIR
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：28.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs：3.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1030pF @ 15V
Power - Max：3.8W (Ta), 48.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：12-PowerPair™
Supplier Device Package：PowerPAIR® 3x3FS
Grade：-
Qualification：-

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SIZF5302DT-T1-RE3

Overview

The SIZF5302DT-T1-RE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET® Gen V technology. It features symmetric high-side and low-side configurations optimized for 50% duty cycles in flip-chip PowerPAIR® 3x3FS packages. Key electrical parameters include a maximum drain-source voltage of 30 V, continuous drain current of 100 A at TC = 25 °C, and typical gate charge of 6.7 nC at VGS = 4.5 V. The device offers a maximum on-state resistance of 3.2 mΩ at VGS = 10 V and 5.3 mΩ at VGS = 4.5 V.

Feature Summary

Symmetric dual N-channel configuration with optimized high-side and low-side pairing for 50% duty cycle applications
Flip-chip technology providing optimal thermal design and reduced PCB footprint compared to traditional packages
TrenchFET® Gen V architecture delivering optimized RDS(on)-Qg and RDS(on)-Qgd figure of merit for high-frequency switching efficiency

Applications

Synchronous buck converters
Computer and server peripherals power management
Half-bridge circuits
Point-of-load (POL) conversion
Telecom DC/DC modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm package type matches the required PowerPAIR 3 x 3FS specifications. Ensure all technical parameters align with the application requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring compact dual MOSFET solutions with high thermal performance. Evaluate the trade-off between on-resistance and gate charge based on switching frequency requirements. Consider the package's thermal characteristics when designing heat dissipation strategies for the target application environment.

Part Context

This part belongs to the SiZF5300DT/SiZF5302DT series of 30 V symmetric dual N-channel MOSFETs. These devices are designed to replace two discrete PowerPAK 1212 components, offering significant space savings while maintaining high efficiency in power conversion applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing absolute maximum ratings and thermal characteristics if considering alternative components.