SIZF906DT-T1-GE3

Overview

The SiZF906DT is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features asymmetric channel configurations within a single PowerPAIR 6 x 5F package. Channel-1 has a maximum RDS(on) of 0.0038 Ω at VGS = 10 V and 0.0053 Ω at VGS = 4.5 V, with a typical Qg of 11 nC. Channel-2 offers lower resistance, with a maximum RDS(on) of 0.00117 Ω at VGS = 10 V and 0.00158 Ω at VGS = 4.5 V, and a typical Qg of 46 nC. Both channels support a continuous drain current of 60 A at TC = 25 °C.

Feature Summary

• Integrates a SkyFET low-side MOSFET with a built-in Schottky diode for synchronous rectification applications.
• Employs TrenchFET Gen IV power MOSFET architecture to achieve low on-state resistance and efficient switching.
• Includes comprehensive testing protocols, with 100% verification of gate resistance and unclamped inductive switching (UIS) capability.

Applications

• CPU core power delivery systems
• Computer and server peripheral power management
• Point-of-load (POL) conversion stages
• Synchronous buck converter topologies
• Telecommunications DC/DC power supplies

Procurement Notes

Verify the component authenticity by cross-referencing the part marking with the official Vishay Siliconix datasheet specifications. Ensure the ordering suffix matches the required lead-free and halogen-free compliance standards. Confirm that the PowerPAIR package dimensions align with the recommended land pattern guidelines provided in the package information document to guarantee proper soldering and thermal performance during assembly.

Selection Notes

Select this component when designing asymmetric half-bridge or synchronous buck circuits requiring distinct drive characteristics for high-side and low-side switches. The integrated Schottky diode eliminates the need for external body diode alternatives, reducing board space. Consider the specific RDS(on) and gate charge requirements of each channel to optimize efficiency and switching speed for the target application voltage and current levels.

Part Context

This device belongs to the SiZF series of dual MOSFETs from Vishay Siliconix, designed for high-density power applications. The PowerPAIR package provides a compact footprint suitable for modern surface-mount assembly processes. The integration of two distinct N-channel MOSFETs with different electrical characteristics allows for optimized performance in asymmetric power stages without requiring multiple discrete components.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.