SIZF920DT-T1-GE3

$2.24

Description：MOSFET 2N-CH 30V 28A 8POWERPAIR
Series：TrenchFET® Gen IV

SKU:b8913a6db9a7 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 28A 8POWERPAIR
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual), Schottky
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs：3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1300pF @ 15V, 5230pF @ 15V
Power - Max：3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (6x5)
Grade：-
Qualification：-

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SIZF920DT-T1-GE3

Overview

The SiZF920DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. Channel-1 features a maximum RDS(on) of 3.07 mΩ at VGS = 10 V and a continuous drain current of 76 A at TC = 25 °C. Channel-2 offers a lower RDS(on) of 1.05 mΩ at VGS = 10 V with a continuous drain current of 197 A at TC = 25 °C. The device operates within a junction temperature range of -55 to +150 °C and is housed in a leadless PowerPAIR 6 x 5F package.

Feature Summary

SkyFET low-side MOSFET architecture with an integrated Schottky diode for enhanced switching performance.
TrenchFET Gen IV power MOSFET structure providing optimized on-resistance and gate charge characteristics.
Manufactured in a leadless PowerPAIR 6 x 5F surface-mount package designed for high thermal efficiency.

Applications

CPU core power regulation
Computer and server peripheral power management
Point-of-load (POL) conversion
Synchronous buck converter circuits
Telecommunications DC/DC power supplies

Procurement Notes

Verify the specific ordering suffix against official Vishay Siliconix documentation to confirm compliance attributes such as halogen-free status and RoHS directives. Confirm that the PowerPAIR package orientation matches the target PCB footprint design. Validate all electrical parameters directly from the manufacturer's datasheet prior to finalizing procurement specifications.

Selection Notes

Evaluate the distinct electrical profiles of the two channels; Channel-2 provides significantly higher current capacity and lower on-resistance compared to Channel-1. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider the thermal resistance ratings when designing the heat dissipation strategy for the leadless package configuration.

Part Context

This component belongs to the SiZF series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the proprietary TrenchFET Gen IV technology to achieve superior power density and switching efficiency. The integration of a Schottky diode distinguishes it from standard dual MOSFET arrays, making it suitable for applications requiring fast body-diode replacement.