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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 33A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
- Rds On (Max) @ Id, Vgs：2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SiZF928DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen V technology. It features an asymmetric configuration within the PowerPAIR 6 x 5F package. Channel-1 provides a maximum on-resistance of 2.45 mΩ at VGS = 10 V and a continuous drain current of 88 A. Channel-2 offers a lower resistance of 750 µΩ at VGS = 10 V with a continuous drain current of 248 A. The device supports a gate-source voltage range of +16 V and -12 V, operates within a junction temperature range of -55 °C to +150 °C, and includes 100% Rg and UIS testing.
Feature Summary
- Asymmetric dual N-channel architecture optimized for high-current synchronous buck applications
- TrenchFET Gen V power MOSFET technology ensuring low conduction losses
- Leadless PowerPAIR package design providing enhanced thermal dissipation capabilities
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Telecom DC/DC converters
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the package type aligns with the designated land pattern specifications for proper surface mounting.
Selection Notes
Evaluate the specific current requirements of the target circuit to determine if the asymmetric channel configuration is suitable. Channel-2 is designed for significantly higher current handling compared to Channel-1. Verify that the gate drive voltage levels are compatible with the specified threshold and maximum ratings for optimal switching performance.
Part Context
This component belongs to the SiZF series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 6 x 5F leadless package, which is distinct from standard surface-mount packages due to its exposed copper terminals. The series is engineered for high-efficiency power conversion in compact form factors.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on pinout or generic electrical parameters without verifying datasheet specifications.
