SKB15N60HSATMA1

Description：IGBT NPT 600V 27A TO263-3-2
Series：-

SKU:a9ac8a7abe43 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 27A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：27 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 15A
Power - Max：138 W
Switching Energy：530µJ
Input Type：Standard
Gate Charge：80 nC
Td (on/off) @ 25°C：13ns/209ns
Test Condition：400V, 15A, 23Ohm, 15V
Reverse Recovery Time (trr)：111 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SKB15N60HSATMA1

Overview

The SKB15N60HSATMA1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and is housed in a TO-263-3 (D2PAK-3) surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 27 A at 25°C. Power dissipation is rated at 138 W, with a saturation voltage of 1.9 V. Operating temperatures range from -40°C to +175°C.

Feature Summary

Integrates TRENCHSTOP IGBT technology for optimized switching performance
Features an integrated fast recovery anti-parallel diode
Designed for high-efficiency power conversion applications

Applications

Motor drives and inverters
Switched-mode power supplies (SMPS)
Industrial power control systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions meet manufacturer specifications to prevent moisture damage prior to soldering. Validate package integrity against shipping requirements.

Selection Notes

Select this component for designs requiring 600V blocking capability in compact SMD form factors. Consider thermal management needs given the 138W dissipation rating. Evaluate gate drive requirements against the specified voltage limits. Compare electrical characteristics with alternative packages if board space constraints vary.

Part Context

This part belongs to Infineon's TRENCHSTOP family of IGBTs. It represents a discrete semiconductor solution designed for medium-power switching applications. The TO-263-3 package facilitates automated surface-mount assembly while providing adequate thermal grounding capabilities for industrial environments.