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SKP02N60XKSA1 is a fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode. It features a collector-emitter voltage of 600 V and a continuous collector current of 2 A at 25°C. The device has a maximum power dissipation of 25 W and operates within a junction temperature range of -55°C to +175°C. Packaged in TO-220-3 for through-hole mounting, it belongs to the SKP series designed for high-speed switching applications requiring integrated freewheeling capabilities.
Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance status via official datasheets. Check lifecycle status as older SKP variants may be obsolete. Ensure proper handling for through-hole assembly processes.
Select based on 600V blocking requirement and 2A current rating. Consider thermal management for 25W dissipation in TO-220-3 package. Verify compatibility with gate drive requirements for NPT IGBTs. Evaluate system frequency against switching speed specifications.
Part of Infineon's SKP series of fast IGBTs with integrated diodes. Uses NPT technology for improved ruggedness. Designed for compact power conversion solutions requiring high reliability and fast recovery characteristics in single packages.
Check for direct replacements in Infineon's SKP or SKH series with similar voltage and current ratings. Verify pinout compatibility for TO-220-3 packages. Confirm thermal resistance values match existing heatsink designs. Review updated datasheets for any parameter changes in successor components.