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The SKP06N60 is a fast NPT-technology IGBT with an integrated soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V and a DC collector current of 12A at 25°C. The saturation voltage is 2.3V at 6A. Operating junction temperature ranges from -55°C to +150°C. Short circuit withstand time is 10µs. Power dissipation is 68W at 25°C case temperature. Thermal resistance (junction-to-case) is 1.85K/W for the IGBT and 3.5K/W for the diode.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm datasheet revision matches Rev 2.4 dated 12.06.2013. Ensure package marking aligns with K06N60. Check RoHS compliance status as specified in the official documentation before integration into production lines.
Select based on required short circuit withstand time and thermal management needs. Consider the specific thermal resistance values for both IGBT and diode when designing heatsinking. Evaluate gate resistor requirements against switching energy loss characteristics to optimize performance within the 600V system constraints.
This component belongs to the Infineon TRENCHSTOP family utilizing NPT technology. It is designed for robust industrial applications requiring high reliability. The PG-TO-220-3-1 package facilitates through-hole mounting with isolated electrical properties.
SKA06N60 shares identical electrical ratings but utilizes FullPAK packaging. Verify mechanical footprint compatibility before substitution. No other direct substitutes are documented in the provided source material.
The maximum short circuit withstand time is 10 microseconds under specified conditions.
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled Diode.
The operating junction temperature range is -55°C to +150°C.