ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 31A TO220-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：62 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：139 W
- Switching Energy：570µJ
- Input Type：Standard
- Gate Charge：76 nC
- Td (on/off) @ 25°C：32ns/234ns
- Test Condition：400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr)：279 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3-1
- Grade：-
- Qualification：-
Download product information
Overview
The SKP15N60 is a Fast IGBT in NPT-technology with a soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V and a DC collector current of 31A at 25°C (15A at 100°C). The saturation voltage is 2.3V at 15A and 25°C. Short circuit withstand time is 10µs. Power dissipation is 139W at 25°C case temperature. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- NPT-Technology provides very tight parameter distribution, high ruggedness, and parallel switching capability for 600V applications.
- Features a soft, fast recovery anti-parallel Emitter Controlled Diode combined with low conduction losses.
- Offers 75% lower turn-off energy compared to previous generation devices.
Applications
- Motor controls
- Inverter
Procurement Notes
Verify the specific package type required, as the datasheet lists both PG-TO-220-3-1 and PG-TO-247-3 variants under the SKx15N60 family. Confirm JEDEC qualification status for target applications. Ensure short circuit protection circuits are designed for the specified 10µs withstand time limit. Check RoHS compliance and Pb-free lead plating specifications during sourcing.
Selection Notes
Select based on the required thermal resistance and package style. The TO-220 variant has a junction-to-case thermal resistance of 0.9 K/W, while the TO-247 variant offers different thermal characteristics. Consider the gate charge and switching energy losses relative to the operating frequency. Verify that the diode reverse recovery characteristics meet the system's snubber or freewheeling requirements.
Part Context
This component belongs to Infineon's TRENCHSTOP™ Fast IGBT family utilizing NPT technology. It is designed for robust performance in medium-power switching applications. The device integrates an anti-parallel diode within the same package, simplifying circuit design for half-bridge configurations.
Replacement Considerations
SKW15N60 (Same electrical specs, PG-TO-247-3 package)
FAQ
What is the maximum short circuit withstand time?
The maximum short circuit withstand time is 10µs at VGE = 15V, VCC ≤ 600V, and Tj ≤ 150°C.
Does the device include an integrated diode?
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled Diode.
What is the typical turn-off energy loss?
At Tj=25°C, VCC=400V, IC=15A, and RG=21Ω, the typical turn-off energy (Eoff) is 0.27 mJ.
