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The SKW07N120 is a Fast IGBT in NPT-technology with a soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200V and a DC collector current of 16.5A at 25°C. The turn-off energy (Eoff) is 0.7mJ. Designed for motor controls, inverters, and SMPS, it offers lower Eoff compared to previous generations. It has a short circuit withstand time of 10µs and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix FKSA1 against Infineon's official documentation to confirm lead frame material and plating specifications. Ensure compliance with RoHS standards and Pb-free lead plating requirements as stated in the datasheet. Confirm JEDEC qualification status for your target application environment before procurement.
Select this component for applications requiring high ruggedness and temperature-stable behavior due to its NPT technology. Consider the 10µs short circuit withstand time for robust protection schemes. Evaluate the thermal resistance values and power dissipation limits relative to your cooling solution to ensure operation within the specified junction temperature range.
This device belongs to Infineon's Fast IGBT series utilizing Non-Punch Through (NPT) technology. It is designed to offer improved performance over previous generations, specifically focusing on reduced switching losses while maintaining high reliability. The PG-TO-247-3 package facilitates efficient heat dissipation for medium-power applications.
SKW07N120 XKSA1
The maximum short circuit withstand time is 10µs when VGE = 15V and Tj ≤ 150°C.
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled Diode.
The operating junction temperature range is from -55°C to +150°C.