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Product Detailed Parameters
- Description：IGBT NPT 1200V 30A TO247-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 15A
- Power - Max：198 W
- Switching Energy：1.9mJ
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：18ns/580ns
- Test Condition：800V, 15A, 33Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
SKW15N120FKSA1 is a Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 1200V and DC collector current of 15A at 100°C. The device offers short circuit withstand time of 10µs, turn-off energy of 1.5mJ at 25°C, and operates within a junction temperature range of -55 to +150°C.
Feature Summary
- NPT technology provides tight parameter distribution and parallel switching capability
- Soft, fast recovery anti-parallel Emitter Controlled Diode reduces reverse recovery losses
- Lower turn-off energy compared to previous generation devices
- Qualified according to JEDEC standards for target applications
Applications
- Motor controls
- Inverter systems
- Switching Mode Power Supplies (SMPS)
Procurement Notes
Verify the specific ordering suffix 'FKSA1' against official Infineon documentation to confirm package type, tape-and-reel specifications, and RoHS compliance status. Ensure the component matches the exact datasheet revision IFAG IPC TD VLS 1 Rev. 2_3 for accurate electrical parameters and thermal characteristics.
Selection Notes
Select this component for high-frequency switching applications requiring robust short-circuit withstand capability. The NPT technology ensures stable behavior across wide temperature ranges. Consider the 10µs short circuit time and low Eoff when designing protection circuits for motor drives and inverters operating under heavy load conditions.
Part Context
The SKW15N120 belongs to Infineon's Fast IGBT family utilizing Non-Punch Through (NPT) technology. This series is engineered for industrial power conversion, offering improved ruggedness and temperature stability. The integration of an Emitter Controlled Diode enhances performance in hard-switching applications compared to standard diode configurations.
Replacement Considerations
Consult official Infineon cross-reference guides for direct replacements. Verify that any substitute maintains compatible VCE(sat), Qg, and thermal resistance values. Ensure the replacement supports the required 1200V blocking voltage and 15A continuous current rating.
