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Product Detailed Parameters
- Description：IGBT NPT 600V 41A TO247-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：41 A
- Current - Collector Pulsed (Icm)：112 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
- Power - Max：250 W
- Switching Energy：1.29mJ
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：44ns/291ns
- Test Condition：400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr)：400 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
SKW30N60FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Fieldstop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 41 A at 25°C. The device operates within a temperature range of -55°C to +150°C and dissipates up to 250 W of power. Packaged in a TO-247-3 flange mount configuration with through-hole installation, it offers low conduction loss characteristics suitable for high-efficiency switching applications.
Feature Summary
- Integrates Fieldstop technology for optimized conduction and switching performance
- Features low conduction loss design to enhance overall system efficiency
- Provides robust thermal management capability via flange mount package
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter circuits
- Induction cooking appliances
Procurement Notes
Verify the specific suffix FKSA1 against official Infineon documentation to confirm exact binning or packaging variations. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the datasheet revision date to guarantee alignment with current electrical specifications and mechanical dimensions before finalizing orders.
Selection Notes
Select this component when a 600V rating and 41A continuous current capacity are required in a TO-247-3 package. Consider its Fieldstop technology for applications demanding lower conduction losses compared to standard NPT designs. Verify that the operating junction temperature does not exceed 150°C and that the thermal resistance allows for adequate heat sinking in the target enclosure design.
Part Context
This IGBT belongs to Infineon's discrete power transistor portfolio, designed for general-purpose hard and soft switching applications. It complements other TRENCHSTOP and Fieldstop series devices by offering a balance of voltage blocking capability and current handling in a standard through-hole form factor widely used in industrial and consumer power electronics.
Replacement Considerations
Direct substitutes include SKW30N60 and SGW30N60FKSA1. Verify pinout compatibility and thermal resistance parameters when replacing with these variants to ensure circuit integrity.
