RF Diode SM0812-M1 product image

SM0812-M1

$11.31
  • Description:RF DIODE PIN 700V M1
  • Series:-

SKU:8691187486c3 Category: Brand:

  
  • Quantity
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SM0812-M1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 700V M1. Review the specifications below when checking this part for your BOM.

RF Diode specifications for SM0812-M1

  • Description:RF DIODE PIN 700V M1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):700V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1.3pF @ 50V, 1MHz
  • Resistance @ If, F:400mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Package / Case:1208 (3020 Metric)
  • Supplier Device Package:M1
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for SM0812-M1

SM0812-M1

RF Diode Overview

The SM0812-M1 is a single PIN diode manufactured by Microchip Technology, designed for RF applications. It features a peak reverse voltage of 700 V and a maximum forward current of 1 A. The device exhibits a maximum diode capacitance of 1.3 pF at 50 V reverse bias and 1 MHz frequency. Maximum series resistance is specified at 400 mOhms at minimum forward current. Constructed using silicon technology, it serves as a discrete semiconductor component for signal switching and attenuation in radio frequency circuits.

RF Diode Feature Summary

  • Single configuration PIN diode structure optimized for RF signal handling
  • High reverse voltage capability supporting robust blocking performance
  • Low capacitance characteristic ensuring minimal signal interference in high-frequency operation

RF Diode Applications

  • RF signal switching circuits
  • Attenuator modules
  • Radio frequency power control systems

RF Diode Procurement Notes

Verify the specific manufacturer datasheet to confirm electrical tolerances and thermal characteristics prior to integration. Ensure that the operating conditions remain within the specified reverse voltage and forward current limits to maintain device reliability. Cross-reference pinout and package dimensions with the official mechanical drawing to guarantee compatibility with the intended PCB layout and assembly process.

RF Diode Selection Notes

Select this component when high reverse voltage isolation and low capacitance are required for RF signal paths. The 1 A forward current rating supports moderate power levels. Evaluate the 400 mOhm series resistance against insertion loss requirements. Confirm that the silicon technology and single-diode configuration align with the circuit topology and frequency range specifications.

RF Diode Part Context

This part belongs to the category of discrete semiconductor products, specifically RF diodes. It is distinct from integrated circuits or logic devices, serving as a passive active component for controlling RF signals. The designation indicates a standard PIN diode configuration used in microwave and radio frequency engineering contexts for switching and attenuation functions.

SM0812-M1SM0812-M1
$11.31
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