SMA5106

SMA5106

$2.42
  • Description:MOSFET 4N-CH 100V 4A 12SIP
  • Series:-

SKU:900e570784a1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 100V 4A 12SIP
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Rds On (Max) @ Id, Vgs:550mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:230pF @ 25V
  • Power - Max:4W (Ta), 28W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:12-SIP
  • Supplier Device Package:12-SIP
  • Grade:-
  • Qualification:-

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SMA5106

Overview

The SMA5106 is an N-channel power MOSFET manufactured by Sanken Electric, featuring a built-in flywheel diode for freewheeling applications. It provides a drain-source voltage rating of 100V and a continuous drain current capacity of ±4A at 25°C. The device incorporates a low on-resistance, specified as a maximum of 0.55Ω at VGS=10V and ID=2A. Key electrical characteristics include a gate threshold voltage between 1.0V and 2.0V, a forward voltage drop of the internal diode up to 1.2V at 1A, and a reverse recovery time of 100ns. Thermal management capabilities include a junction-to-case thermal resistance of 4.46°C/W.

Feature Summary

  • Integrated flywheel diode designed for absorbing flyback voltage in switching circuits
  • Low on-state resistance optimized for efficient power conduction
  • High avalanche energy capability supporting robust operation under unclamped conditions

Applications

  • Switching regulators and DC-DC converters
  • Motor drive circuits requiring synchronous rectification or freewheeling
  • Power supply units utilizing high-efficiency MOSFET topologies

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received parts match the SMA5106 designation and packaging specifications. Review the latest datasheet for any updates regarding absolute maximum ratings and thermal performance before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 100V N-channel MOSFET with integrated body diode functionality. Ensure the application current does not exceed the 4A continuous limit without adequate heatsinking. Consider the 0.55Ω RDS(ON) specification when calculating conduction losses and thermal dissipation requirements for the target operating environment.

Part Context

This part belongs to Sanken's SMA series of power MOSFETs, which are engineered for general-purpose switching applications. The series emphasizes compact packaging and reliable performance in power conversion systems. The SMA5106 specifically targets cost-sensitive designs needing moderate voltage blocking and current handling capabilities.

Replacement Considerations

Direct replacements must maintain the 100V/4A rating and N-channel configuration with an integrated diode. Verify pinout compatibility and thermal resistance values to ensure equivalent heat dissipation performance in the existing footprint.

FAQ

What is the maximum repetitive avalanche energy rating?

The SMA5106 has a rated avalanche energy (EAS) of 6mJ under specific test conditions.

Does the device include a built-in diode?

Yes, the SMA5106 integrates a flywheel diode for absorbing flyback voltage, eliminating the need for an external component in many configurations.

What is the maximum junction temperature?

The maximum allowable junction temperature (Tch) for the SMA5106 is 150°C.

SMA5106SMA5106
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