SMA5127

SMA5127

$2.41
  • Description:MOSFET 3N/3P-CH 60V 4A 12SIP
  • Series:-

SKU:b182f0ce6ed6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 3N/3P-CH 60V 4A 12SIP
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:4A
  • Rds On (Max) @ Id, Vgs:550mOhm @ 2A, 4V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:150pF @ 10V, 320pF @ 10V
  • Power - Max:4W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:12-SIP
  • Supplier Device Package:12-SIP
  • Grade:-
  • Qualification:-

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SMA5127

Overview

The SMA5127 is a dual MOSFET module from Sanken Electric USA Inc. containing one N-channel and one P-channel device in a single package. It features a drain-source voltage of ±60 V and a continuous drain current of ±4 A at 25°C. The on-resistance is typically 0.55 Ω for both channels under specified gate drive conditions. Maximum power dissipation reaches 28 W with an infinite heatsink, while the junction temperature limit is 150°C. The component utilizes a TO-220AB package.

Feature Summary

  • Integrated complementary N-channel and P-channel MOSFETs within a single housing
  • Capable of handling 60 V breakdown voltage across both channels
  • Designed for efficient thermal management with low junction-to-case resistance

Applications

  • 3-phase motor drive circuits
  • High-side and low-side switching applications
  • Power conversion stages requiring complementary pairs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts before finalizing procurement plans.

Selection Notes

Select this component when a matched N-channel and P-channel pair is required for space-constrained designs. Ensure the gate drive voltage meets the minimum threshold for the desired on-resistance. Verify that the thermal design accommodates the specified power dissipation limits under the intended operating conditions.

Part Context

This part belongs to Sanken Electric's SMA series of dual MOSFET modules. These components are engineered to simplify circuit board layout by combining complementary transistors into a single unit, reducing the overall footprint compared to using discrete devices.

Replacement Considerations

SMA5127N

FAQ

What is the typical on-resistance for the N-channel?

The typical on-resistance (RDS(ON)) for the N-channel is 0.55 Ω when measured at VGS=4V and ID=2A.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 8 A for the N-channel and -8 A for the P-channel, with a pulse width of 1ms or less and a duty cycle of 1% or less.

What is the junction-to-case thermal resistance?

The junction-to-case thermal resistance (θj-c) is 4.46 °C/W when all circuits are operating.

SMA5127SMA5127
$2.41
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