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The SMA5127 is a dual MOSFET module from Sanken Electric USA Inc. containing one N-channel and one P-channel device in a single package. It features a drain-source voltage of ±60 V and a continuous drain current of ±4 A at 25°C. The on-resistance is typically 0.55 Ω for both channels under specified gate drive conditions. Maximum power dissipation reaches 28 W with an infinite heatsink, while the junction temperature limit is 150°C. The component utilizes a TO-220AB package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and check for any product change notices or obsolescence alerts before finalizing procurement plans.
Select this component when a matched N-channel and P-channel pair is required for space-constrained designs. Ensure the gate drive voltage meets the minimum threshold for the desired on-resistance. Verify that the thermal design accommodates the specified power dissipation limits under the intended operating conditions.
This part belongs to Sanken Electric's SMA series of dual MOSFET modules. These components are engineered to simplify circuit board layout by combining complementary transistors into a single unit, reducing the overall footprint compared to using discrete devices.
SMA5127N
The typical on-resistance (RDS(ON)) for the N-channel is 0.55 Ω when measured at VGS=4V and ID=2A.
The maximum pulsed drain current is 8 A for the N-channel and -8 A for the P-channel, with a pulse width of 1ms or less and a duty cycle of 1% or less.
The junction-to-case thermal resistance (θj-c) is 4.46 °C/W when all circuits are operating.