SMBT3904SE6327HTSA1

Overview

The SMBT3904SE6327HTSA1 is a dual NPN silicon switching transistor array manufactured by Infineon Technologies. It integrates two galvanically isolated transistors within a single SOT363 (PG-SOT363-PO) surface-mount package. The device supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 200 mA per element, with a total power dissipation rating of 250 mW at a case temperature up to 115°C. Key electrical characteristics include a minimum DC current gain of 40 at 100 µA and a transition frequency of 300 MHz. The component is qualified according to AEC-Q101 standards and features Pb-free packaging compliant with RoHS directives.

Feature Summary

• Dual configuration containing two galvanically isolated NPN transistors for independent circuit operation
• Automotive-grade qualification in accordance with the AEC-Q101 reliability standard
• Low collector-emitter saturation voltage optimized for efficient switching applications
• High DC current gain performance across a wide range of collector currents

Applications

• General-purpose signal switching and logic interface circuits
• Driver stages for relays, solenoids, and LED loads
• Pulse width modulation (PWM) control applications
• Digital-to-analog conversion buffer circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package variant and tape-and-reel specifications. Confirm that the procurement channel provides traceable manufacturing data to ensure compliance with automotive quality requirements. Cross-reference the date code and lot number with the manufacturer's records to validate authenticity and storage history prior to assembly.

Selection Notes

Select this component when a design requires two electrically isolated NPN switching elements within a minimal footprint. The SOT363 package is suitable for high-density PCB layouts where space constraints prevent the use of separate discrete packages. Ensure the thermal management strategy accounts for the 250 mW total power dissipation limit under expected operating conditions.

Part Context

This part belongs to the SMBT3904 series, which includes complementary PNP types such as the SMBT3906. The 'S' designation specifically indicates the dual-transistor array configuration housed in the SOT363 package, distinguishing it from the single-element SMBT3904 found in the SOT23 package. The series is designed to provide matched electrical characteristics between the internal transistors.

Replacement Considerations

Direct functional substitutes include other dual NPN arrays in the SOT363 package, such as the MMBT3904S or equivalent parts from other manufacturers meeting the same 40V/200mA isolation specifications. Verify pinout compatibility and thermal resistance values before substitution.