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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V (VGS)
- Resistance - RDS(On)：300 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SMMBFJ177LT1G is a P-Channel depletion mode JFET chopper manufactured by onsemi. It operates within a junction temperature range of -55°C to +150°C and features a maximum total device dissipation of 225 mW at 25°C ambient. The component provides a gate-source breakdown voltage of 30 Vdc, with a zero-gate-voltage drain current ranging from -1.5 mA to -20 mA at -15 Vds. Its maximum drain-source on resistance is 300 Ohms, and it exhibits an input capacitance of up to 11 pF at 1 MHz.
Feature Summary
- AEC-Q101 qualified for automotive applications
- PPAP capable manufacturing process
- Pb-free and halogen-free compliant construction
Applications
- Automotive signal switching circuits
- Low-noise analog signal routing
- High-temperature industrial control systems
Procurement Notes
Verify the specific ordering suffix 'S' indicates AEC-Q101 qualification and PPAP capability requirements. Confirm package style matches the required pinout configuration for your PCB layout. Ensure compliance with RoHS directives if operating in restricted material zones. Validate thermal management strategies against the specified 225 mW dissipation limit.
Selection Notes
Select this component when high-temperature stability and low leakage are critical. The P-Channel configuration suits negative rail or high-side switching applications. Verify that the 300 Ohm on-resistance meets the circuit's impedance requirements. Consider the SOT-23 footprint constraints during mechanical design integration.
Part Context
This part belongs to the MMBFJ177 series of single P-Channel JFETs. It shares electrical characteristics with the standard MMBFJ177LT1G but includes the 'S' prefix for specialized automotive site controls. The device utilizes silicon technology housed in a compact SOT-23 surface-mount package.
Replacement Considerations
- MMBFJ177LT1G
FAQ
What is the pin configuration for the SOT-23 package?
Pin 1 is Drain, Pin 2 is Source, and Pin 3 is Gate.
Is this device suitable for automotive use?
Yes, the 'S' prefix denotes AEC-Q101 qualification and PPAP capability.
What is the maximum gate-source cutoff voltage?
The maximum gate-source cutoff voltage is 2.5 Vdc.
