SMMBT4403LT1G

Single Bipolar Transistors Overview

The SMMBT4403LT1G is a PNP silicon switching transistor manufactured by onsemi in the SOT-23 (TO-236) surface-mount package. It features a maximum collector-emitter voltage of -40 Vdc and continuous collector current of -600 mAdc. The device has a peak collector current rating of -900 mAdc and a transition frequency of 200 MHz. Thermal dissipation is rated at 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature. Junction temperature range spans from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• AEC-Q101 qualified with PPAP capability for automotive applications requiring unique site and control change requirements.
• Compliant with RoHS standards and free from lead, halogens, and brominated flame retardants.

Single Bipolar Transistors Applications

• Automotive electronic circuits
• General-purpose switching applications
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'S' indicates AEC-Q101 qualification and PPAP capability as defined by onsemi. Confirm the package style matches the required pinout configuration for the target circuit design. Ensure compliance with environmental directives such as RoHS and halogen-free requirements during component selection.

Single Bipolar Transistors Selection Notes

Select this component when high reliability in automotive environments is required alongside standard switching performance. Consider the thermal resistance values for both FR-5 and alumina substrates when designing heat dissipation strategies. Verify that the -40 V breakdown voltage meets the system's maximum operating voltage constraints.

Single Bipolar Transistors Part Context

This part belongs to the MMBT4403L/SMMBT4403L series of PNP silicon transistors. The 'S' prefix distinguishes it from the standard MMBT4403LT1G variant by adding automotive qualification requirements. It shares the same electrical characteristics but adheres to stricter manufacturing controls for automotive supply chains.

Single Bipolar Transistors Replacement Considerations

MMBT4403LT1G

Single Bipolar Transistors FAQ

What does the 'S' prefix signify in the SMMBT4403LT1G part number?

The 'S' prefix indicates that the device is AEC-Q101 qualified and PPAP capable, designed for automotive and other applications requiring unique site and control change requirements.

What are the maximum power dissipation ratings for this transistor?

The total device dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate, both measured at an ambient temperature of 25°C.