SMMBTA06LT1G

Single Bipolar Transistors Overview

The SMMBTA06LT1G is an NPN silicon driver transistor manufactured by onsemi, housed in a surface-mount SOT-23 package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 500 mA. The device supports a total power dissipation of 225 mW at 25°C ambient temperature with a thermal resistance of 556 °C/W. Electrical characteristics include a DC current gain (hFE) of at least 100 at specified test conditions and a current-gain bandwidth product (fT) of 100 MHz. The component operates within a junction and storage temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Qualified for automotive applications requiring unique site and control change requirements under AEC-Q101 standards
• Capable of producing PPAP documentation for manufacturing process validation
• Constructed using lead-free, halogen-free, and brominated flame retardant-free materials compliant with RoHS directives

Single Bipolar Transistors Applications

• Automotive electronic circuits requiring qualified discrete components
• General-purpose switching and amplification tasks
• Driver stages in low-power signal processing systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'S' indicates compliance with automotive qualification standards and PPAP capability requirements. Confirm that the procurement channel provides official traceability documentation. Ensure the delivered parts match the exact package style and marking specifications defined in the manufacturer's datasheet to guarantee functional compatibility.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with an 80 V collector-emitter breakdown voltage is required for space-constrained designs. The SOT-23 package offers a compact footprint suitable for high-density PCB layouts. Consider the 500 mA current capacity and 225 mW power dissipation limits during thermal management planning to ensure reliable operation within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the MMBTA05L and MMBTA06L series of NPN silicon driver transistors produced by onsemi. The 'S' prefix specifically denotes units manufactured for automotive or specialized applications meeting stricter quality control protocols. These devices are designed as general-purpose switches and amplifiers, sharing core electrical parameters with standard variants while adhering to enhanced supply chain controls.

Single Bipolar Transistors Replacement Considerations

Standard MMBTA06LT1G serves as a functional equivalent but lacks the automotive-specific 'S' prefix qualifications. Verify if the application strictly requires AEC-Q101 certification before substituting with non-automotive grade parts.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the SMMBTA06LT1G?

The maximum collector-emitter voltage (VCEO) is 80 Vdc.

Does the SMMBTA06LT1G meet automotive qualification standards?

Yes, the 'S' prefix indicates the device is AEC-Q101 qualified and PPAP capable for automotive applications.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 100, measured at IC = 10 mAdc and VCE = 1.0 Vdc.