SMMBTH10-4LT3G

Description：RF TRANS NPN 25V 800MHZ SOT-23-3
Series：-

SKU:ca2b7c6a214e Category: Bipolar RF Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 25V 800MHZ SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：25V
Frequency - Transition：800MHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：225mW
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 4mA, 10V
Current - Collector (Ic) (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

Download product information

SMMBTH10-4LT3G

Overview

The SMMBTH10-4LT3G is an NPN surface-mount digital transistor manufactured by onsemi, designed for general-purpose VHF and UHF applications. It features a maximum collector-emitter voltage (VCEO) of 25 V and a collector-base voltage (VCBO) of 30 V. The device has a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 800 MHz. Power dissipation is rated at 225 mW. It operates within a temperature range of -55°C to +150°C and is housed in a compact SOT-23-3 package.

Feature Summary

Optimized for high-frequency VHF and UHF signal processing tasks
Integrated digital switching capability within a compact surface-mount footprint
High transition frequency ensures effective performance in RF circuits

Applications

General-purpose VHF/UHF amplification stages
Digital switching circuits requiring high-speed response
RF signal processing modules

Procurement Notes

Verify the specific suffix '4L' against official datasheets to confirm internal resistor network configuration, as this variant differs from standard single-transistor packages. Ensure compatibility with SOT-23-3 footprints during PCB layout. Cross-reference RoHS compliance documentation for material composition requirements before finalizing procurement orders.

Selection Notes

Select this component when high-frequency operation near 800 MHz is required alongside integrated digital switching functionality. The low power dissipation rating of 225 mW necessitates careful thermal management in dense layouts. Compare hFE specifications against circuit biasing requirements to ensure adequate gain margins for reliable switching performance in VHF environments.

Part Context

This part belongs to the MMBTH10L series of NPN digital transistors. It shares the SOT-23-3 form factor with other small-signal devices but distinguishes itself through optimized RF characteristics. The series targets applications demanding both switching speed and high-frequency stability in minimal space constraints.