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The SMMBTH10LT1 is an NPN RF small-signal transistor manufactured by onsemi, housed in a compact SOT-723 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 25 V and a collector-base voltage (VCBO) of 30 V. The device supports a continuous collector current (IC) of 500 mA with a maximum power dissipation (Pd) of 265 mW. Its transition frequency (fT) reaches 650 MHz, ensuring high-speed performance. The DC current gain (hFE) has a minimum value of 60 at 4 mA and 10 V. Operating temperatures range from -55°C to 150°C junction temperature.
Verify the specific ordering suffix against official onsemi documentation to confirm packaging type and RoHS compliance status. Ensure the component source matches authorized distribution channels to prevent counterfeit risks. Cross-reference the manufacturer part number with distributor databases for accurate stock availability and lead time information prior to procurement planning.
Select this component when a low-profile NPN transistor is required for VHF frequencies up to 650 MHz. Compare the 265 mW power dissipation limit against thermal management capabilities in the final assembly. Verify that the 25 V breakdown voltage meets the circuit's peak voltage requirements under all operating conditions.
This part belongs to the MMBTH10 series of RF transistors designed for general-purpose high-frequency applications. It shares electrical characteristics with similar onsemi devices but differs in packaging and specific suffix designations. The SOT-723 package provides a smaller outline compared to standard SOT-23 variants, facilitating higher density PCB layouts.
Publicly confirmed substitute part numbers are not available in the provided reference data. Consult official onsemi cross-reference guides or distributor substitution tools for verified alternatives.