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Product Detailed Parameters
- Description：JFET N-Channel -25V Low Noise
- Series：SMPJ110
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：100 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：28pF @ 0V
- Resistance - RDS(On)：15 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The InterFET SMPJ110 is an N-Channel Junction Field-Effect Transistor (JFET) designed for high-gain, low-noise switching applications. It utilizes the proprietary N0450S geometry and is available in a surface-mount SOT-23 package. Key electrical characteristics include a Gate-to-Source Breakdown Voltage of -25 V, a Drain-to-Source Saturation Current of 10 mA, and a typical forward transconductance of 100 mS. The device exhibits a typical noise level of 1 nV/√Hz and operates within a junction temperature range of -55°C to 125°C.
Feature Summary
- Utilizes InterFET N0450S geometry for optimized performance
- Provides high gain with typical transconductance of 100 mS
- Features low noise characteristics with typical input noise of 1 nV/√Hz
Applications
- Chopper circuits
- Commutator systems
- Analog switches
Procurement Notes
Verify the specific ordering suffix to confirm the required packaging format, such as bulk or tape and reel quantities. Confirm RoHS compliance status for environmental regulations. Ensure the selected variant matches the intended mounting style, either surface mount or through-hole, prior to finalizing procurement orders.
Selection Notes
Select the SMPJ110 when high gain and low noise are critical requirements for signal integrity. Consider the SOT-23 package for space-constrained designs requiring surface-mount technology. Evaluate the -25 V breakdown voltage against circuit operating conditions to ensure adequate safety margins during selection.
Part Context
The SMPJ110 belongs to the J110 family of N-Channel JFETs manufactured by InterFET. This series includes both through-hole TO-92 and surface-mount SOT-23 variants. The component is engineered specifically for precision analog applications where low distortion and high fidelity are essential operational parameters.
Replacement Considerations
The SMPJ110A serves as a direct functional equivalent within the same product family. Both variants share identical electrical specifications and pin configurations, allowing for interchangeable use in existing designs without modification.
FAQ
What is the typical forward transconductance of the SMPJ110?
The typical forward transconductance is 100 mS.
What is the maximum Gate-to-Source Breakdown Voltage?
The maximum Gate-to-Source Breakdown Voltage is -25 V.
Is the SMPJ110 RoHS compliant?
Yes, the device is RoHS compliant.
