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Product Detailed Parameters
- Description：JFET P-Channel 30V Low Noise
- Series：SMPJ270
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：12pF @ 10V
- Resistance - RDS(On)：130 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SMPJ270TR is a P-Channel Junction Field Effect Transistor (JFET) manufactured by InterFET, supplied in a surface-mount SOT23 package on a tape and reel. It features a Gate-to-Source Breakdown Voltage of 30V minimum and a typical noise voltage of 6 nV/√Hz at 1kHz. The device exhibits a forward transconductance ranging from 6 to 15 mS and an input capacitance of 32 pF. Designed for low-noise applications, it operates within a junction temperature range of -55°C to 125°C.
Feature Summary
- Utilizes InterFET proprietary P0099F geometry for optimized performance
- Provides ultra-low noise characteristics suitable for sensitive signal paths
- Offers flexible mounting options including Surface Mount Technology (SMT)
- Compliant with RoHS environmental standards
Applications
- Analog Switch circuits
- Sample and Hold systems
- Low Noise High Gain Amplifiers
Procurement Notes
Verify the specific suffix TR indicates tape and reel packaging configuration. Confirm the component matches the J270 variant specifications rather than the J271. Ensure the ordering quantity aligns with the manufacturer's reel capacity limits. Validate that the application environment remains within the specified thermal operating ranges.
Selection Notes
Select this component when low noise performance is critical for analog signal processing. The SOT23 package facilitates compact surface-mount designs. Consider the cutoff voltage characteristics for compatibility with low-level power supply requirements. Evaluate the transconductance range against the desired gain specifications for the target amplifier topology.
Part Context
This part belongs to the InterFET J270/J271 family of P-Channel JFETs. These devices are engineered for high-gain, low-noise applications. The J270 variant specifically targets low-level power supplies with a lower cutoff voltage compared to the J271. The family supports various packaging formats including through-hole and bare die options.
Replacement Considerations
Direct substitutes include the SMPJ271TR for similar P-Channel JFET functionality with different cutoff voltage parameters. Verify pinout compatibility and electrical parameter overlaps before substitution.
