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The SMV1275-079LF is a silicon hyperabrupt junction tuning varactor diode designed for battery operation. It features an ultra-small SC-79 package with a series inductance of 0.7 nH. The device supports a maximum reverse voltage of 10 V and operates within a temperature range of -55 °C to +125 °C. Electrical specifications include a typical capacitance of 3.45 pF at 1 V reverse bias, 1.81 pF at 4 V, and a series resistance of 0.7 Ω at 470 MHz. The component achieves a capacitance ratio of 1.8 between 1 V and 4 V.
Verify the specific datasheet revision and manufacturing date code upon order confirmation. Confirm that the ordering suffix matches the required lead-free packaging standard. Ensure all handling instructions regarding moisture sensitivity level 1 are strictly followed during storage and solder assembly to prevent reliability issues.
Select this component when a high-capacitance ratio and low-series resistance are required for wideband tuning applications. The SC-79 package is suitable for space-constrained designs. Verify that the 10 V reverse voltage rating aligns with the circuit's maximum operating conditions to ensure long-term device reliability.
This part belongs to Skyworks Solutions' hyperabrupt junction varactor family. These components utilize specialized silicon processing to achieve superior tuning linearity compared to abrupt junction devices. The product line targets RF front-end modules requiring precise frequency control in compact form factors.
The SMV1275-079LF is documented as cross-compatible with the Toshiba JDV2S01E. Verify pinout orientation and exact electrical tolerances before substitution.