SNXH160T120L2Q1PG

Overview

The SNXH160T120L2Q1PG is a Q1PACK power module integrating T-Type Neutral Point Clamp topology. It contains half-bridge IGBTs rated at 1200 V and 160 A, alongside neutral-point clamps rated at 650 V and 150 A. The module utilizes trench field-stop technology for low switching loss. Electrical characteristics include a typical collector-emitter saturation voltage of 2.06 V at 25°C for the half-bridge IGBTs. Thermal resistance from junction to heatsink is specified at 0.337 °C/W for the half-bridge IGBTs and 1.864 °C/W for the inverse diodes. An integrated NTC thermistor with a nominal resistance of 22 kΩ at 25°C provides temperature monitoring.

Feature Summary

• Integrates high-performance IGBTs with rugged anti-parallel diodes in a single compact package.
• Employs extremely efficient trench field-stop technology to minimize system power dissipation.
• Features a low inductive layout design optimized for high-speed switching applications.
• Utilizes press-fit pins within the Q1PACK case outline for secure mechanical mounting.

Applications

• Solar inverters
• Uninterruptable power supplies

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm pin configuration and packaging details. Ensure thermal interface material specifications match the datasheet requirements for accurate thermal resistance calculations. Confirm that the gate drive circuitry supports the required short-circuit withstand time and voltage levels for safe operation.

Selection Notes

Select this component for designs requiring a split T-type NPC topology to reduce switching losses compared to standard two-level inverters. Evaluate the thermal impedance curves to ensure the heatsinking solution maintains junction temperatures within the recommended operating range under expected load conditions. Verify compatibility with the 15 V gate drive voltage and check insulation properties for system safety compliance.

Part Context

This module belongs to the Q1PACK series from onsemi, designed for high-density power conversion. It replaces older discrete solutions by combining multiple semiconductor chips into a unified assembly. The part number indicates a 160 A rating and 1200 V blocking capability for the main switches, with specific ratings for the neutral point components.

Replacement Considerations

Direct replacements must match the Q1PACK form factor and electrical ratings. Verify that alternative modules support the same T-Type Neutral Point Clamp topology and have compatible pin assignments for direct board integration without redesigning the mechanical mounting structure.

FAQ

What is the maximum short-circuit withstand time for the half-bridge IGBTs?

The half-bridge IGBTs can withstand a short circuit for 10 microseconds when the gate-emitter voltage is 15 V, collector-emitter voltage is 600 V, and the junction temperature is less than or equal to 150°C.

What are the isolation test voltage specifications?

The module has an isolation test voltage of 3000 VRMS for one second at 60 Hz or 50 Hz. The creepage distance is 12.7 mm and the clearance is 8.06 mm.

How does the neutral-point IGBT voltage rating differ from the half-bridge IGBT?

The half-bridge IGBTs (T1, T4) have a collector-emitter voltage rating of 1200 V, while the neutral-point IGBTs (T2, T3) have a lower collector-emitter voltage rating of 650 V.