SNXH300B95H3Q2F2PG-N-R

Description：IGBT MODULE
Series：-

SKU:78a57cd4ce3c Category: IGBT Modules Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT MODULE
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

Download product information

SNXH300B95H3Q2F2PG-N-R

Overview

The SNXH300B95H3Q2F2PG-N-R is a silicon IGBT module manufactured by onsemi. It features a maximum collector-emitter voltage of 950 V and a continuous collector current of 108 A at 25°C. The device has a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 221 W. It operates within a temperature range of -40°C to +125°C and utilizes a Q2PACK package with press-fit mounting.

Feature Summary

High-voltage insulation capability for robust power switching
Low saturation voltage for efficient conduction
Press-fit mounting for secure mechanical integration

Applications

Industrial motor drives
Uninterruptible power supplies
Induction heating systems

Procurement Notes

Verify the specific suffix 'N-R' against official datasheets, as it may indicate tape-and-reel packaging or special handling requirements distinct from standard tray configurations. Confirm RoHS compliance status and ensure the supplier provides traceable documentation matching the exact part number variant to avoid receiving non-compliant or mismatched inventory.

Selection Notes

Select this component when a 950 V IGBT module with high current capacity is required. Ensure the application design accommodates the 221 W power dissipation through adequate thermal management. Verify that the system architecture supports press-fit installation methods and that gate drive voltages remain within the specified limits for reliable operation.

Part Context

This module belongs to the SNXH series of high-performance IGBT modules designed for demanding power conversion applications. It represents a discrete semiconductor solution offering robust thermal performance and electrical characteristics suitable for medium to high-power industrial environments requiring reliable switching capabilities.