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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 10V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8J1FU6TB is a dual P-channel MOSFET array manufactured by ROHM Semiconductor. It features an 8-pin SOP package designed for surface mount applications. The device supports a drain-source voltage of 30V and a continuous drain current of 5A. Key electrical parameters include a typical on-resistance of 63 milliohms and a power dissipation rating of 2W. It complies with RoHS3 directives and has a moisture sensitivity level of 1.
Feature Summary
- Dual P-channel configuration within a compact surface-mount package
- Optimized for DC-DC converter switching applications
- Compliant with RoHS3 environmental standards
Applications
- DC-DC converter switching circuits
- Power management modules
- General-purpose electronic equipment
Procurement Notes
Verify component authenticity through authorized channels, as the part is subject to a Product Change Notification regarding End-of-Life status dated October 29, 2018. Confirm that the received units match the specific ordering code and package type. Ensure compliance with RoHS3 requirements for the intended application environment before integration into final assemblies.
Selection Notes
Select this component for designs requiring a dual P-channel solution in an 8-pin footprint. Verify that the 30V voltage rating and 5A current capacity meet circuit demands. Consider the 63 milliohm on-resistance for thermal management calculations. Ensure the SOP-8 package dimensions align with the printed board layout constraints.
Part Context
This component belongs to the ROHM MOSFET array family, specifically engineered for low-voltage switching tasks. It utilizes standard silicon planar technology housed in a small outline package. The device serves as a discrete semiconductor solution for power control functions in consumer and industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The manufacturer has issued an End-of-Life notification for this specific model. Designers should consult official ROHM resources for potential obsolescence management strategies or alternative product recommendations.
FAQ
What is the maximum drain-source voltage for the SP8J1FU6TB?
The maximum drain-source voltage (Vds) is 30V.
Is the SP8J1FU6TB suitable for automotive use?
The provided documentation does not specify automotive qualification. Users must verify if the component meets specific automotive reliability standards required for their application.
