SP8J62TB1

Description：MOSFET 2P-CH 30V 8SOP
Series：-

SKU:e8ffe4204a4d Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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SP8J62TB1

Overview

The SP8J62TB1 is a dual P-channel MOSFET array manufactured by ROHM Semiconductor, designed for low-voltage applications. It features a breakdown voltage of 30V and a continuous drain current of 4.5A. The device exhibits a typical on-resistance of 29 milliohms at Vgs = -4.5V. Gate-source voltage limits are specified at ±20V, with a threshold voltage of 2.5V. The component utilizes an 8-SOP surface-mount package and supports operation temperatures from -55°C to +150°C.

Feature Summary

Dual P-channel configuration within a single compact package
Low on-resistance optimized for 4V drive logic compatibility
Built-in gate-source protection diode structure

Applications

DC-DC converter circuits
Motor driver interfaces
Power management modules

Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides valid traceability for RoHS compliance status. Cross-reference the manufacturer part number with authorized distributor catalogs to prevent substitution errors during sourcing.

Selection Notes

Select this component when a dual P-channel solution is required for 30V systems driven by 4V logic levels. Evaluate thermal performance based on the 29 milliohm resistance in high-current scenarios. Confirm that the 8-SOP footprint aligns with existing PCB layout constraints and assembly capabilities.

Part Context

This device belongs to the SH8J6xTB1 series of silicon P-channel MOSFETs. It shares architectural similarities with variants like SH8J65TB1 but differs in current rating and drive voltage optimization. The series targets efficient power switching in space-constrained consumer and industrial electronics.