SP8J66TB1

Description：MOSFET 2P-CH 30V 9A 8SOP
Series：-

SKU:a4346b28dc9b Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 9A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9A
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SP8J66TB1

Overview

The SP8J66TB1 is a dual P-channel MOSFET array manufactured by ROHM Semiconductor. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 9A at 25°C. The device utilizes an 8-SOP surface mount package with a typical on-resistance of 29 mOhms. Gate-source voltage limits are specified at ±20V, with a threshold voltage of 2.5V. Key switching parameters include a gate charge of 18nC, rise time of 40ns, and fall time of 65ns. The component operates within a temperature range of -55°C to +150°C and supports power dissipation up to 2W.

Feature Summary

Dual P-channel configuration housed in an 8-SOP surface-mount package for compact circuit integration.
High continuous drain current capability of 9A with low on-resistance for efficient power management.
Enhanced switching performance characterized by fast rise and fall times suitable for high-frequency applications.

Applications

Power supply load switching circuits
Motor control driver stages
Battery protection systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm that the requested variant matches the required thermal and electrical ratings for the target application environment. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel solution is required for 30V logic-level interfaces. Ensure the PCB layout accommodates the 8-SOP footprint and thermal requirements for 2W dissipation. Evaluate the 9A current rating against peak load demands to prevent thermal overstress during operation.

Part Context

This component belongs to ROHM Semiconductor's discrete MOSFET family designed for general-purpose power switching. It serves as a complementary alternative to N-channel arrays in half-bridge configurations. The dual architecture reduces board space compared to using single-channel devices.