SP8K1FU6TB

Description：MOSFET 2N-CH 30V 5A 8SOP
Series：-

SKU:80e0c90a141b Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：230pF @ 10V
Power - Max：2W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SP8K1FU6TB

Overview

The SP8K1FU6TB is a dual N-channel MOSFET manufactured by ROHM Semiconductor. It features a 30V drain-source voltage rating and a 5.0A continuous drain current capability. The device utilizes an SOP-8 surface-mount package with a body size of 6.0x5.0mm and a height of 1.75mm. Key electrical parameters include a typical on-resistance (RDS(on)) of 0.052Ω at VGS=4.5V and 0.036Ω at VGS=10V. Total gate charge (Qg) is typically 3.9nC, with a power dissipation rating of 2.0W. The component operates within a storage temperature range of -55°C to 150°C.

Feature Summary

Dual N-channel configuration in a compact SOP-8 package
Low on-resistance for efficient switching applications
Automotive grade reliability compliant with AEC-Q101 standards

Applications

DC-DC converter circuits
Motor driver stages
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix FU6TB against official ROHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with existing PCB footprints and reflow soldering profiles specified in the datasheet. Confirm supply status as standard production unless otherwise noted in recent lifecycle notices.

Selection Notes

Select this component for designs requiring a dual N-channel topology with low RDS(on) at 4.5V or 10V drive voltages. The 30V rating suits low-voltage systems. Verify that the 2.0W power dissipation and thermal resistance meet the application's heat management requirements within the SOP-8 footprint constraints.

Part Context

The SP8K1 series comprises dual N-channel MOSFETs designed for space-constrained applications. The FU6TB suffix indicates a specific taping configuration for automated assembly. This part belongs to ROHM's lineup of automotive-grade discrete semiconductors intended for robust performance in consumer and industrial electronics.

Replacement Considerations

SP8K2HZG is a confirmed substitute with identical pinout and package dimensions. It offers improved RDS(on) characteristics while maintaining the same SOP-8 form factor and AEC-Q101 compliance.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.