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The SP8K22FRATB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, designed for high-efficiency switching applications. It features a drain-source voltage (V_DSS) of 45V and a continuous drain current (I_D) of 4.5A. The device offers low on-resistance values, specifically 0.046Ω at V_GS = 4V and 0.041Ω at V_GS = 4.5V. Packaged in an SOP-8 format with dimensions of 6.0x5.0mm, it supports surface mount technology. The component is RoHS compliant and operates within a storage temperature range defined by standard industrial specifications.
Verify the specific ordering suffix to ensure compatibility with tape-and-reel packaging requirements. Confirm that the procurement channel sources genuine ROHM Semiconductor products to avoid counterfeit components. Check the supply status as this part may be classified as not recommended for new designs, impacting long-term availability for future production cycles.
Select this component when a dual N-channel MOSFET with 45V rating and 4.5A current capacity is required in an SOP-8 package. Ensure the gate drive voltage aligns with the specified 4V or 4.5V thresholds to achieve optimal on-resistance performance. Consider thermal dissipation capabilities relative to the application's power load and ambient operating conditions.
The SP8K22FRATB belongs to ROHM's series of dual power MOSFETs, sharing pinout and package dimensions with the SP8K22HZG variant. It serves as a direct replacement for legacy designs utilizing similar dual N-channel configurations. The 'TB' suffix typically denotes tape-and-reel packaging for automated manufacturing processes.
The SP8K22HZG is a confirmed substitute with identical pinout and package specifications. Verify electrical parameter equivalence before implementation. No other public substitutes are documented.