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Product Detailed Parameters
- Description：MOSFET 2N-CH 45V 6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K24FU6TB is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor. It features a 45V drain-source voltage rating and a continuous drain current of 6.0A at Ta=25°C. The device supports low-voltage drive with an RDS(on) of 18mΩ typ at VGS=10V and 37mΩ typ at VGS=4.0V. Key electrical parameters include a total gate charge (Qg) of 15.4nC, a forward transfer admittance (Yfs) of 24S, and a body diode reverse recovery time of 27ns. The component is housed in a compact SOP8 surface-mount package.
Feature Summary
- Built-in gate-source protection diode for static electricity defense
- Compact SOP8 surface-mount package design
- Low on-state resistance optimized for 4V drive applications
Applications
- Power switching circuits
- DC/DC converters
- Inverter systems
Procurement Notes
Verify the specific ordering suffix FU6TB against official ROHM documentation to confirm tape-and-reel packaging details and lead marking specifications. Ensure the procurement channel provides valid traceability data matching the manufacturer's original production records.
Selection Notes
Select this component for designs requiring a dual N-channel configuration within a small footprint. Verify that the system operates within the 45V breakdown limit and that thermal management accommodates the 1.4W per element dissipation rating under expected load conditions.
Part Context
This part belongs to the SP8K series of 4V drive N-channel MOSFETs from ROHM. It shares the same pinout and core electrical characteristics as the standard SP8K24 variant but utilizes the FU6TB suffix to denote specific taping and packaging configurations for automated assembly.
Replacement Considerations
Direct substitutes with identical pinouts and packages include the SP8K24HZG and SP8K24FRA. Verify that alternative sources meet the same 45V/6A ratings and SOP8 dimensions before implementation.
FAQ
What is the maximum pulsed drain current for the SP8K24?
The maximum pulsed drain current (IDP) is ±24A, provided the pulse width is ≤10µs and the duty cycle is ≤1%.
Does the SP8K24 include internal protection features?
Yes, it includes a built-in gate-source protection diode designed to protect against static electricity during use.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(th)) typically ranges from 1.0V to 2.5V when measured at VDS=10V and ID=1mA.
