SP8K32FRATB

SP8K32FRATB

  • Description:MOSFET 2N-CH 60V 4.5A 8SOP
  • Series:-

SKU:1570b72e648c Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 4.5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
  • Rds On (Max) @ Id, Vgs:65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:500pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SP8K32FRATB

Overview

The SP8K32FRATB is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for automotive applications with AEC-Q101 qualification. It features an SOP-8 package with dimensions of 6.0x5.0 mm and a thickness of 1.75 mm. The device supports a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 5.0 A. Typical on-resistance (R_DS(on)) values are specified at various drive voltages: 0.04 Ω at 4.5 V, 0.055 Ω at 4 V, and lower values at higher drive voltages such as 10 V. The component has a power dissipation rating of 1 W and a typical gate charge (Q_G) of unspecified nanocoulombs in the provided data snippet, though it is optimized for low-voltage driving. Storage temperature ranges from -55°C to 150°C.

Feature Summary

  • Dual N-channel configuration integrated into a single compact surface-mount package.
  • Automotive-grade reliability certified under AEC-Q101 standards.
  • Optimized for low-voltage gate drive applications with specific R_DS(on) performance at 4V and 4.5V.
  • RoHS compliant construction suitable for environmentally conscious manufacturing.

Applications

  • Automotive electronic control units requiring qualified discrete semiconductors.
  • Low-side switching circuits in vehicle power distribution systems.
  • Load management applications in automotive infotainment or lighting modules.

Procurement Notes

Verify the ordering part number SP8K32FRATB against the base part SP8K32FRATB to ensure correct tape-and-reel packaging specifications. Confirm that the supply status aligns with existing customer support requirements, as related variants may be marked not recommended for new designs. Ensure compliance with RoHS directives and check for any specific quality certifications required for automotive integration projects.

Selection Notes

Select this component when a dual N-channel MOSFET with AEC-Q101 qualification is required for automotive environments. Consider the 60V voltage rating and 5.0A current capacity relative to load requirements. Evaluate the on-resistance characteristics at the intended gate drive voltage, specifically noting the performance at 4V and 4.5V for low-power logic compatibility. Ensure the SOP-8 package fits the available PCB footprint and thermal management constraints.

Part Context

The SP8K32FRATB belongs to ROHM's lineup of automotive-qualified discrete MOSFETs. It shares pinout and package similarities with other parts in the SP8K series, such as the SP8K33HZG, facilitating potential design continuity. These components are engineered to meet the stringent reliability and environmental standards mandated by the automotive industry, providing robust switching capabilities in a small form factor.

Replacement Considerations

The SP8K33HZG is listed as a similar level part with the same pinout and package. Verify electrical parameter compatibility, particularly R_DS(on) and V_DSS, before substitution. Ensure the replacement maintains AEC-Q101 certification if automotive qualification is required for the application.

SP8K32FRATBSP8K32FRATB

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