ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SP8K32HZGTB is a dual N-channel MOSFET from ROHM Semiconductor, designed for automotive applications with AEC-Q101 certification. It features a SOP-8 package containing two independent N-channel transistors. Key electrical parameters include a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 4.5A. The typical on-resistance (R_DS(on)) is 0.055Ω at V_GS=4V, 0.052Ω at V_GS=4.5V, and 0.046Ω at V_GS=10V. Total gate charge (Q_g) is typically 7nC. Power dissipation (P_D) is rated at 2.0W. The device operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration in a compact SOP-8 surface mount package
- Automotive grade reliability certified under AEC-Q101 standards
- Low on-resistance optimized for low-voltage drive conditions
- Integrated ESD protection diodes for enhanced circuit robustness
Applications
- Automotive switching applications requiring high reliability
- Low-side power switching circuits
- Motor control interfaces
- General purpose power management in automotive electronics
Procurement Notes
Verify the ordering part number SP8K32HZGTB against official ROHM documentation to ensure correct specification alignment. Confirm that the component meets AEC-Q101 requirements if used in automotive designs. Check for any Product Change Notices (PCN) related to manufacturing updates or material changes before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel MOSFET with 60V rating and 4.5A current capacity is required in an SOP-8 package. Consider the low R_DS(on) values at 4V and 4.5V gate drives for efficiency in low-voltage systems. Ensure the thermal design accommodates the 2.0W power dissipation limit in the intended application environment.
Part Context
The SP8K32HZGTB belongs to ROHM's series of automotive-grade dual MOSFETs. It is specifically engineered to meet the stringent reliability standards of the automotive industry, as indicated by its AEC-Q101 certification. The SOP-8 package provides a balance between performance and space efficiency for modern electronic control units.
Replacement Considerations
SP8K31FRATB is listed as a replacement with the same pinout and package, though it has different R_DS(on) characteristics. Verify compatibility regarding on-resistance and drive voltage requirements before substitution.
