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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SP8K3FD5TB1 is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage switching applications. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 7A. The device utilizes an SOP-8 surface-mount package with dimensions of 6.0x5.0mm. Key electrical characteristics include a typical on-resistance of 0.025Ω at 4V gate drive and 0.023Ω at 4.5V. The component exhibits a typical gate charge of 8.4nC and a power dissipation rating of 2.0W. It operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP-8 surface mount package
- Low on-resistance optimized for efficient switching at 4V and 4.5V drive voltages
- Built-in gate-source protection diode for enhanced circuit reliability
Applications
- Motor control circuits
- Power switching modules
- Consumer electronics power management
Procurement Notes
Verify the specific ordering suffix TB1 against official ROHM documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that design-in activities account for the component's supply status, as availability may be restricted for new designs.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating and 7A current capacity is required in an SOP-8 footprint. Consider the 0.025Ω on-resistance at 4V drive for low-power logic compatibility. Evaluate thermal performance based on the 2.0W power dissipation limit in the target application environment.
Part Context
This part belongs to ROHM’s discrete semiconductor portfolio, specifically within the MOSFET category. It is engineered for surface-mount assembly, providing a compact solution for modern electronic devices. The SOP-8 package allows for efficient PCB layout while maintaining robust electrical performance for dual-channel switching tasks.
Replacement Considerations
For equivalent performance in the same SOP-8 package, consider the SH8KA2. Verify pinout compatibility and electrical parameters such as Rds(on) and Vdss before substitution.
