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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SP8K3FRATB is a dual N-channel MOSFET designed for automotive applications, certified under the AEC-Q101 standard. It features a 60V drain-source voltage rating and a continuous drain current of 3.5A per channel. The device is optimized for low-voltage driving with a specified drive voltage of 4.0V. At this drive level, the typical on-resistance (RDS(on)) is 0.033Ω. The component is housed in an SOP8 surface-mount package with dimensions of 6.0x5.0mm and a height of 1.75mm. It supports a power dissipation of 2.0W and operates within a temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact SOP8 package
- Automotive-grade reliability verified by AEC-Q101 certification
- Optimized for efficient switching at a low 4.0V gate drive voltage
- Low on-resistance characteristics to minimize conduction losses
Applications
- Automotive load switching circuits
- Low-side driver applications in vehicle electronics
- General-purpose switching in automotive-grade systems
Procurement Notes
Verify the specific ordering suffix TB against official documentation to confirm tape-and-reel packaging details. Confirm that the component status remains appropriate for your project, as it may be designated for existing customers only. Ensure compatibility with SOP8 footprint requirements during PCB layout finalization.
Selection Notes
Select this component when a dual N-channel solution is required in an SOP8 package for automotive environments. The 4.0V drive optimization makes it suitable for low-voltage control interfaces. Compare RDS(on) values at relevant drive voltages against alternative parts to ensure thermal performance meets system constraints.
Part Context
This part belongs to Rohm Semiconductor's automotive MOSFET portfolio, specifically engineered for high reliability in vehicle electronics. It serves as a legacy or support product for existing designs, with the SP8K31HZG identified as the active replacement offering identical pinout and package specifications.
Replacement Considerations
The SP8K31HZG is confirmed as a direct replacement with the same pinout and package. Verify that the RDS(on) value at 4V differs slightly between the two parts to ensure circuit performance remains within acceptable limits.
