SP8K3TB

Overview

The SP8K3TB is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features an SOP-8 surface-mount package with eight terminals and N+N polarity configuration. The device supports a drain-source voltage of 30V and a continuous drain current of 7.0A. Typical on-resistance values are specified at various gate drive voltages: 0.025Ω at 4V, 0.1Ω at 4.5V, and 0.085Ω at 10V. The component operates within a storage temperature range of -55°C to 150°C and includes ESD protection diodes.

Feature Summary

• Dual N-channel architecture integrated into a compact SOP-8 package
• Optimized for low gate drive voltage operation at 4V
• Integrated ESD protection diodes for enhanced circuit reliability

Applications

• Automotive electronic control units requiring AEC-Q101 compliance
• Low-side switching in battery management systems
• General-purpose power switching in industrial equipment

Procurement Notes

Verify the specific ordering suffix TB against official ROHM documentation to confirm packaging details. Confirm supply status as Not Recommended for New Designs before procurement planning. Ensure compatibility with existing SOP-8 footprints during integration.

Selection Notes

Select this component when a dual N-channel MOSFET with 30V rating and 7.0A current capacity is required. Verify that the 4V drive capability aligns with the system logic levels. Consider the SOP-8 package dimensions for PCB layout constraints.

Part Context

This part belongs to ROHM's automotive-grade MOSFET portfolio, certified under AEC-Q101 standards. It serves as a replacement or alternative for legacy designs requiring dual N-channel configurations in space-constrained applications.

Replacement Considerations

SP8KA2 is listed as a similar level replacement with the same package and pinout. Verify electrical parameter equivalence before substitution.