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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K3TB1 is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage driving applications. It features a SOP-8 surface-mount package with eight terminals and an N+N polarity configuration. The device supports a drain-source voltage of 30V and a continuous drain current of 7.0A. Typical on-resistance values are 0.025Ω at a 4V gate drive and 0.019Ω at 4.5V. The total gate charge is typically 3.7nC, with a power dissipation rating of 2.0W. Operating storage temperatures range from -55°C to 150°C.
Feature Summary
- Dual N-channel configuration in a compact SOP-8 package
- Optimized for low gate drive voltages (4V/4.5V)
- Low on-resistance for efficient switching performance
Applications
- General purpose switching circuits
- Motor driver interfaces
- Power management modules
Procurement Notes
Verify the specific ordering suffix TB1 against official ROHM documentation to confirm tape-and-reel packaging quantities. Confirm supply status as the base part number may be designated not recommended for new designs. Ensure compatibility with SOP-8 footprint dimensions during PCB layout verification.
Selection Notes
Select this component when a dual N-channel MOSFET with low Rds(on) at reduced gate voltages is required. Compare the 30V Vdss and 7.0A Id ratings against circuit requirements. Evaluate thermal performance based on the 2.0W power dissipation limit in the SOP-8 package for the intended application environment.
Part Context
This component belongs to ROHM's series of dual MOSFETs optimized for automotive and industrial applications. It shares pinout compatibility with similar variants like the SH8K3 but offers distinct electrical characteristics tailored for 4V drive systems. The SOP-8 form factor allows for space-constrained board designs requiring dual channel isolation.
Replacement Considerations
The SP8KA2TB1 is listed as a similar level replacement with the same package and pinout. Verify that the 8.0A current rating and 60V breakdown voltage of the substitute meet or exceed the original design constraints before implementation.
