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The SP8K52FRATB is a dual N-channel medium power MOSFET manufactured by Rohm Semiconductor. It features an SOP-8 package with eight terminals and operates with a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 3.0A. The typical on-resistance (R_DS(on)) is 0.135Ω at 4V gate drive, 0.13Ω at 4.5V, and unspecified at 10V in the provided data. The device has a total gate charge (Q_g) of 1.7nC and supports surface mount mounting. It is RoHS compliant and supplied in tape packaging with a unit quantity of 2500.
Verify supply status carefully as this component is designated as not recommended for new designs. Confirm availability through authorized distributors for existing production support. Ensure ordering part number matches SP8K52FRATB to guarantee correct SOP-8 taping and 2500-unit packing specifications.
Select this component only for legacy system maintenance or replacement where the original design specified the SP8K52 series. Evaluate thermal performance given the 2W power dissipation limit in the SOP-8 package. Consider the 100V rating and 3.0A current capacity against circuit requirements before finalizing the bill of materials.
This part belongs to the SP8K series of dual N-channel MOSFETs from Rohm Semiconductor. It shares pinout and package dimensions with similar parts like the SP8K52HZG, which remains active. The FRATB suffix indicates the specific tape-and-reel packaging variant of the SOP-8 form factor.
The SP8K52HZG is listed as a similar level part with the same pinout and package. Verify if the active status of the HZG variant meets long-term procurement needs compared to the discontinued FRATB.