SP8K52HZGTB

SP8K52HZGTB

$2.12
  • Description:MOSFET 2N-CH 100V 3A 8SOP
  • Series:-

SKU:9d3cbabc01c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 3A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Rds On (Max) @ Id, Vgs:170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:610pF @ 25V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SP8K52HZGTB

Overview

The SP8K52HZGTB is an automotive-grade dual N-channel power MOSFET compliant with AEC-Q101 standards. It integrates two independent 100V devices within a compact SOP-8 surface-mount package, featuring built-in ESD protection diodes for enhanced reliability in switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 3A. The typical on-resistance (R_DS(on)) varies by gate drive voltage: 0.135Ω at V_GS=4V, 0.13Ω at V_GS=4.5V, and 0.12Ω at V_GS=10V. Total gate charge (Q_G) is typically 8.5nC, with a maximum power dissipation of 2W and a storage temperature range from -55°C to 150°C.

Feature Summary

  • Dual N-channel configuration integrated into a single SOP-8 package for space-efficient circuit design.
  • Automotive-grade qualification ensuring high reliability under strict environmental conditions.
  • Integrated ESD protection diodes to safeguard against electrostatic discharge events.

Applications

  • General-purpose switching circuits requiring automotive reliability standards.
  • Motor driver interfaces utilizing low-voltage gate drive signals.
  • Power management modules in compact electronic assemblies.

Procurement Notes

Verify the ordering part number SP8K52HZGTB matches the required SOP-8 taping packaging format. Confirm that the component meets specific AEC-Q101 requirements for your target application. Ensure compatibility with the specified 2500-unit reel quantity during procurement planning. Check for any upcoming product change notices (PCN) that may affect long-term supply or specifications.

Selection Notes

Select this component when a dual N-channel MOSFET with 100V rating and automotive certification is required. Consider the 3A drain current limit and 2W power dissipation capability for thermal management. Evaluate the R_DS(on) values at your specific gate drive voltage to ensure efficiency targets are met. The SOP-8 package is suitable for surface-mount assembly processes.

Part Context

This part belongs to Rohm Semiconductor's automotive MOSFET portfolio, designed specifically for high-reliability applications. The SP8K series utilizes advanced cell technology to achieve low on-resistance within small packages. Compliance with AEC-Q101 distinguishes it from standard industrial grade parts, making it suitable for vehicle electronics where failure consequences are critical.

Replacement Considerations

No direct public substitute part numbers are documented for this specific model in the provided data. Designers should consult official replacement guides if discontinuation occurs, as pinout and electrical characteristics must match precisely for SOP-8 dual N-channel configurations.

SP8K52HZGTBSP8K52HZGTB
$2.12
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