SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SP8K80TB1 is a dual N-channel power MOSFET in an SOP8 package, designed for low on-resistance and fast switching. It features a drain-source voltage of 500V and a continuous drain current of 0.5A. The typical on-resistance is 9Ω at a gate drive voltage of 10V. Total gate charge is 3.8nC, with power dissipation rated at 2W. Operating temperature ranges from -55°C to 150°C.
Verify the specific suffix TB1 against official RoHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with SOP8 surface mount processes. Confirm that the application does not require automotive-grade qualification, as this standard product is not recommended for vehicle use.
Select this component when high voltage isolation (500V) is required alongside dual channel functionality in a compact footprint. The 10V drive requirement must align with the system logic levels. Consider the 0.5A current limit and 2W thermal dissipation constraints for the specific load profile.
This part belongs to Rohm's general-purpose power MOSFET lineup, utilizing micro-processing technology to achieve low on-resistance. It serves as a standard-level discrete component for industrial and consumer electronics where automotive reliability standards are not mandated.
No public substitute part numbers are documented for this specific model. Designers should evaluate pin-compatible alternatives only after verifying electrical parameter equivalence and package dimensions through official manufacturer cross-reference tools.