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The SP8M24FRATB is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel configuration within a single SOP-8 package. It supports a drain-source voltage of 45 V and a continuous drain current of 4.5 A. The device exhibits typical on-resistance values of 0.046 Ω at 4 V gate drive and 0.041 Ω at 4.5 V. Power dissipation is rated at 2 W, with a total gate charge of approximately 23 nC. Operating temperatures range from -55°C to +150°C. This component is designated as not recommended for new designs.
Verify the supply status carefully before procurement, as this part is marked as not recommended for new designs. Confirm that existing inventory or last-time-buy options meet project timelines. Ensure compatibility with current design constraints since future manufacturing support may be limited. Cross-reference ordering suffixes to confirm packaging and tape specifications match assembly requirements.
Select this component only for maintenance or legacy system upgrades where the specific complementary N+P configuration is required. Evaluate thermal management capabilities given the 2 W power dissipation limit in the SOP-8 package. Consider the 45 V breakdown voltage and 4.5 A current rating against actual circuit loads. Verify that the 4 V/4.5 V drive voltage compatibility aligns with the system's logic levels.
The SP8M24FRATB belongs to ROHM's lineup of automotive-qualified complementary MOSFETs designed for robust performance in vehicle electronics. It serves as a paired solution for efficient power switching, combining both N-channel and P-channel functionalities in one footprint. The SOP-8 package facilitates space-constrained PCB layouts while maintaining electrical isolation between channels.
SP8M24FRATB is listed as a similar level replacement for SP8M24FRA, sharing the same pinout and package dimensions. Both parts are subject to the same supply status restrictions.